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PD - 9.1382A
IRFP054N
HEXFET ? Power MOSFET
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Advanced Process Technology
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l
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Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
D
V DSS = 55V
R DS(on) = 0.012 ?
I D = 81A ?
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
TO-247AC
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
81 ?
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
57
290
170
1.1
± 20
360
43
17
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
0.90
R θ CS
R θ JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
–––
40
°C/W
8/25/97
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